ON Semiconductor - NSVMUN5133DW1T1G

KEY Part #: K6528810

NSVMUN5133DW1T1G Pricing (USD) [924855pcs Stock]

  • 1 pcs$0.03999
  • 6,000 pcs$0.03777

Part Number:
NSVMUN5133DW1T1G
Manufacturer:
ON Semiconductor
Detailed description:
TRANS 2PNP BRT BIPO SOT363-6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Diodes - Zener - Single, Thyristors - SCRs - Modules, Transistors - IGBTs - Modules, Power Driver Modules and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in ON Semiconductor NSVMUN5133DW1T1G electronic components. NSVMUN5133DW1T1G can be shipped within 24 hours after order. If you have any demands for NSVMUN5133DW1T1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSVMUN5133DW1T1G Product Attributes

Part Number : NSVMUN5133DW1T1G
Manufacturer : ON Semiconductor
Description : TRANS 2PNP BRT BIPO SOT363-6
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : SC-88/SC70-6/SOT-363

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