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ON Semiconductor - NVMFD5C650NLT1G

KEY Part #: K6521907

NVMFD5C650NLT1G Pricing (USD) [82350pcs Stock]

  • 1 pcs$0.47481
Part Number:
NVMFD5C650NLT1G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET 2N-CH 60V 111A S08FL.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in ON Semiconductor NVMFD5C650NLT1G electronic components. NVMFD5C650NLT1G can be shipped within 24 hours after order. If you have any demands for NVMFD5C650NLT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFD5C650NLT1G Product Attributes

Part Number : NVMFD5C650NLT1G
Manufacturer : ON Semiconductor
Description : MOSFET 2N-CH 60V 111A S08FL
Series : Automotive, AEC-Q101
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 21A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 98µA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 2546pF @ 25V
Power - Max : 3.5W (Ta), 125W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerTDFN
Supplier Device Package : 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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