Vishay Semiconductor Diodes Division - VS-10ETF10S-M3

KEY Part #: K6434644

VS-10ETF10S-M3 Pricing (USD) [93906pcs Stock]

1 pcs$0.41639
1,000 pcs$0.37735

Part Number:: VS-10ETF10S-M3

Manufacturer:: Vishay Semiconductor Diodes Division

Detailed description:: DIODE GEN PURP 1KV 10A D2PAK. Schottky Diodes & Rectifiers New Input Diodes - D2PAK-e3

Manufacturer's standard lead time:: In stock

Shelf life:: One Year

Chip From:: Hong Kong

RoHS:

Payment method:

Shipment way:

Family Categories:: KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Diodes - RF, Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single and Thyristors - DIACs, SIDACs ...

Competitive Advantage:: We specialize in Vishay Semiconductor Diodes Division VS-10ETF10S-M3 electronic components. VS-10ETF10S-M3 can be shipped within 24 hours after order. If you have any demands for VS-10ETF10S-M3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

VS-10ETF10S-M3 Product Attributes

Part Number : VS-10ETF10S-M3

Manufacturer : Vishay Semiconductor Diodes Division

Description : DIODE GEN PURP 1KV 10A D2PAK

Series : -

Part Status : Active

Diode Type : Standard

Voltage - DC Reverse (Vr) (Max) : 1000V

Current - Average Rectified (Io) : 10A

Voltage - Forward (Vf) (Max) @ If : 1.33V @ 10A

Speed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 310ns

Current - Reverse Leakage @ Vr : 100µA @ 1000V

Capacitance @ Vr, F : -

Mounting Type : Surface Mount

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package : D2PAK

Operating Temperature - Junction : -40°C ~ 150°C

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