HAT2173H-EL-E Pricing (USD) [66799pcs Stock]
- 1 pcs$0.61474
- 2,500 pcs$0.61168
- Part Number:
- HAT2173H-EL-E
- Manufacturer:
- Renesas Electronics America
- Detailed description:
- MOSFET N-CH 100V 25A LFPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Power Driver Modules, Diodes - Zener - Arrays and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Renesas Electronics America HAT2173H-EL-E electronic components. HAT2173H-EL-E can be shipped within 24 hours after order. If you have any demands for HAT2173H-EL-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HAT2173H-EL-E Product Attributes
Part Number :
HAT2173H-EL-E
Manufacturer :
Renesas Electronics America
Description :
MOSFET N-CH 100V 25A LFPAK
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
8V, 10V
Rds On (Max) @ Id, Vgs :
15 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id :
6V @ 20mA
Gate Charge (Qg) (Max) @ Vgs :
61nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4350pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
30W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
LFPAK
Package / Case :
SC-100, SOT-669
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