APTM100UM45DAG Pricing (USD) [337pcs Stock]
- 1 pcs$168.79940
- 10 pcs$160.65029
- 25 pcs$154.82967
- Part Number:
- APTM100UM45DAG
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- MOSFET N-CH 1000V 215A SP6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Single, Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Microsemi Corporation APTM100UM45DAG electronic components. APTM100UM45DAG can be shipped within 24 hours after order. If you have any demands for APTM100UM45DAG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTM100UM45DAG Product Attributes
Part Number :
APTM100UM45DAG
Manufacturer :
Microsemi Corporation
Description :
MOSFET N-CH 1000V 215A SP6
Series :
POWER MOS 7®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
215A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
52 mOhm @ 107.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 30mA
Gate Charge (Qg) (Max) @ Vgs :
1602nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
42700pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
5000W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SP6
Package / Case :
SP6
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