Infineon Technologies - BSM75GD120DN2BOSA1

KEY Part #: K6534166

BSM75GD120DN2BOSA1 Pricing (USD) [501pcs Stock]

  • 1 pcs$92.62090

Part Number:
BSM75GD120DN2BOSA1
Manufacturer:
Infineon Technologies
Detailed description:
IGBT 2 LOW POWER ECONO3-1.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Power Driver Modules, Transistors - Programmable Unijunction, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Diodes - RF and Transistors - JFETs ...
Competitive Advantage:
We specialize in Infineon Technologies BSM75GD120DN2BOSA1 electronic components. BSM75GD120DN2BOSA1 can be shipped within 24 hours after order. If you have any demands for BSM75GD120DN2BOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSM75GD120DN2BOSA1 Product Attributes

Part Number : BSM75GD120DN2BOSA1
Manufacturer : Infineon Technologies
Description : IGBT 2 LOW POWER ECONO3-1
Series : -
Part Status : Not For New Designs
IGBT Type : -
Configuration : Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 103A
Power - Max : 520W
Vce(on) (Max) @ Vge, Ic : 3V @ 15V, 75A
Current - Collector Cutoff (Max) : 1.5mA
Input Capacitance (Cies) @ Vce : 5.1nF @ 25V
Input : Standard
NTC Thermistor : No
Operating Temperature : 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module