Vishay Semiconductor Diodes Division - BAQ135-GS18

KEY Part #: K6458505

BAQ135-GS18 Pricing (USD) [1730596pcs Stock]

  • 1 pcs$0.02137
  • 10,000 pcs$0.01977

Part Number:
BAQ135-GS18
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 125V 200MA SOD80. Diodes - General Purpose, Power, Switching 125 Volt 200mA 2.0 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BAQ135-GS18 electronic components. BAQ135-GS18 can be shipped within 24 hours after order. If you have any demands for BAQ135-GS18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAQ135-GS18 Product Attributes

Part Number : BAQ135-GS18
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 125V 200MA SOD80
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 125V
Current - Average Rectified (Io) : 200mA
Voltage - Forward (Vf) (Max) @ If : 1V @ 100mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 1nA @ 60V
Capacitance @ Vr, F : 3pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : SOD-80 Variant
Supplier Device Package : SOD-80 QuadroMELF
Operating Temperature - Junction : -65°C ~ 175°C

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