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Comchip Technology - CDBGBSC101200-G

KEY Part #: K6470441

CDBGBSC101200-G Pricing (USD) [13393pcs Stock]

  • 1 pcs$3.07719
Part Number:
CDBGBSC101200-G
Manufacturer:
Comchip Technology
Detailed description:
DIODE DUAL SILICON CARBIDE POWER. Schottky Diodes & Rectifiers DUAL SiC POWER SCHOTTKY, 10A 1200V
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays, Transistors - Special Purpose, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - JFETs ...
Competitive Advantage:
We specialize in Comchip Technology CDBGBSC101200-G electronic components. CDBGBSC101200-G can be shipped within 24 hours after order. If you have any demands for CDBGBSC101200-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CDBGBSC101200-G Product Attributes

Part Number : CDBGBSC101200-G
Manufacturer : Comchip Technology
Description : DIODE DUAL SILICON CARBIDE POWER
Series : -
Part Status : Active
Diode Configuration : 1 Pair Common Cathode
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) (per Diode) : 18A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 5A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 100µA @ 1200V
Operating Temperature - Junction : -55°C ~ 175°C
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247

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