JAN1N5615US Pricing (USD) [6983pcs Stock]
- 1 pcs$5.90097
- 10 pcs$5.31176
- 25 pcs$4.83977
- 100 pcs$4.36756
- 250 pcs$4.01342
- 500 pcs$3.65929
- Part Number:
- JAN1N5615US
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- DIODE GEN PURP 200V 1A D-5A. Rectifiers Rectifier
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Diodes - Bridge Rectifiers, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Microsemi Corporation JAN1N5615US electronic components. JAN1N5615US can be shipped within 24 hours after order. If you have any demands for JAN1N5615US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JAN1N5615US Product Attributes
Part Number :
JAN1N5615US
Manufacturer :
Microsemi Corporation
Description :
DIODE GEN PURP 200V 1A D-5A
Series :
Military, MIL-PRF-19500/429
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
200V
Current - Average Rectified (Io) :
1A
Voltage - Forward (Vf) (Max) @ If :
800mV @ 3A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
150ns
Current - Reverse Leakage @ Vr :
500µA @ 200V
Capacitance @ Vr, F :
-
Mounting Type :
Surface Mount
Package / Case :
SQ-MELF, A
Supplier Device Package :
D-5A
Operating Temperature - Junction :
-65°C ~ 200°C
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