ON Semiconductor - MUN5312DW1T2G

KEY Part #: K6528808

MUN5312DW1T2G Pricing (USD) [2161844pcs Stock]

  • 1 pcs$0.01711
  • 15,000 pcs$0.01454

Part Number:
MUN5312DW1T2G
Manufacturer:
ON Semiconductor
Detailed description:
TRANS NPN/PNP PREBIAS SOT363.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in ON Semiconductor MUN5312DW1T2G electronic components. MUN5312DW1T2G can be shipped within 24 hours after order. If you have any demands for MUN5312DW1T2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MUN5312DW1T2G Product Attributes

Part Number : MUN5312DW1T2G
Manufacturer : ON Semiconductor
Description : TRANS NPN/PNP PREBIAS SOT363
Series : -
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 385mW
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : SC-88/SC70-6/SOT-363

You May Also Be Interested In