Toshiba Semiconductor and Storage - RN1313(TE85L,F)

KEY Part #: K6526899

RN1313(TE85L,F) Pricing (USD) [3011pcs Stock]

  • 3,000 pcs$0.01910
  • 6,000 pcs$0.01661
  • 15,000 pcs$0.01412
  • 30,000 pcs$0.01329
  • 75,000 pcs$0.01246
  • 150,000 pcs$0.01107

Part Number:
RN1313(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
TRANS PREBIAS NPN 0.15W USM.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - RF, Transistors - Programmable Unijunction, Power Driver Modules, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage RN1313(TE85L,F) electronic components. RN1313(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN1313(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1313(TE85L,F) Product Attributes

Part Number : RN1313(TE85L,F)
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS PREBIAS NPN 0.15W USM
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 250MHz
Power - Max : 150mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM

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