Vishay Semiconductor Diodes Division - S4PM-M3/86A

KEY Part #: K6444701

S4PM-M3/86A Pricing (USD) [456713pcs Stock]

  • 1 pcs$0.08099
  • 3,000 pcs$0.06829

Part Number:
S4PM-M3/86A
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 1KV 4A TO277A. Rectifiers 4.0 Amp 1000 Volt
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division S4PM-M3/86A electronic components. S4PM-M3/86A can be shipped within 24 hours after order. If you have any demands for S4PM-M3/86A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S4PM-M3/86A Product Attributes

Part Number : S4PM-M3/86A
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 1KV 4A TO277A
Series : eSMP®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1000V
Current - Average Rectified (Io) : 4A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 4A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 2.5µs
Current - Reverse Leakage @ Vr : 10µA @ 1000V
Capacitance @ Vr, F : 30pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-277, 3-PowerDFN
Supplier Device Package : TO-277A (SMPC)
Operating Temperature - Junction : -55°C ~ 150°C

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