IPA65R660CFDXKSA1 Pricing (USD) [91131pcs Stock]
- 1 pcs$0.42906
- 500 pcs$0.42739
- Part Number:
- IPA65R660CFDXKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 650V 6A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - JFETs and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPA65R660CFDXKSA1 electronic components. IPA65R660CFDXKSA1 can be shipped within 24 hours after order. If you have any demands for IPA65R660CFDXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPA65R660CFDXKSA1 Product Attributes
Part Number :
IPA65R660CFDXKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V 6A TO220
Series :
CoolMOS™
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
660 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
615pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
27.8W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO220 Full Pack
Package / Case :
TO-220-3 Full Pack
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