Infineon Technologies - IPG20N06S2L65AATMA1

KEY Part #: K6523231

IPG20N06S2L65AATMA1 Pricing (USD) [171012pcs Stock]

  • 1 pcs$0.21629
  • 5,000 pcs$0.18325

Part Number:
IPG20N06S2L65AATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET 2N-CH 8TDSON.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules, Transistors - Special Purpose, Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays and Transistors - JFETs ...
Competitive Advantage:
We specialize in Infineon Technologies IPG20N06S2L65AATMA1 electronic components. IPG20N06S2L65AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N06S2L65AATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPG20N06S2L65AATMA1 Product Attributes

Part Number : IPG20N06S2L65AATMA1
Manufacturer : Infineon Technologies
Description : MOSFET 2N-CH 8TDSON
Series : Automotive, AEC-Q101, OptiMOS™
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 20A
Rds On (Max) @ Id, Vgs : 65 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 410pF @ 25V
Power - Max : 43W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerVDFN
Supplier Device Package : PG-TDSON-8-10

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