[1036pcs Stock]
- Part Number:
- FF800R17KF6CB2NOSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- IGBT MODULE VCES 1200V 800A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Arrays, Thyristors - TRIACs, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF, Diodes - RF and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies FF800R17KF6CB2NOSA1 electronic components. FF800R17KF6CB2NOSA1 can be shipped within 24 hours after order. If you have any demands for FF800R17KF6CB2NOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FF800R17KF6CB2NOSA1 Product Attributes
Part Number :
FF800R17KF6CB2NOSA1
Manufacturer :
Infineon Technologies
Description :
IGBT MODULE VCES 1200V 800A
Series :
-
Part Status :
Obsolete
IGBT Type :
-
Configuration :
2 Independent
Voltage - Collector Emitter Breakdown (Max) :
1700V
Current - Collector (Ic) (Max) :
-
Power - Max :
6250W
Vce(on) (Max) @ Vge, Ic :
3.1V @ 15V, 800A
Current - Collector Cutoff (Max) :
1.5mA
Input Capacitance (Cies) @ Vce :
52nF @ 25V
Input :
Standard
NTC Thermistor :
No
Operating Temperature :
-40°C ~ 125°C
Mounting Type :
Chassis Mount
Package / Case :
Module
Supplier Device Package :
Module
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