Vishay Semiconductor Diodes Division - BAW76-TAP

KEY Part #: K6456075

BAW76-TAP Pricing (USD) [4071459pcs Stock]

  • 1 pcs$0.00908
  • 50,000 pcs$0.00684

Part Number:
BAW76-TAP
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 50V 300MA DO35. Diodes - General Purpose, Power, Switching 35 Volt 300mA 2ns
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers, Diodes - RF, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BAW76-TAP electronic components. BAW76-TAP can be shipped within 24 hours after order. If you have any demands for BAW76-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAW76-TAP Product Attributes

Part Number : BAW76-TAP
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 50V 300MA DO35
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 50V
Current - Average Rectified (Io) : 300mA (DC)
Voltage - Forward (Vf) (Max) @ If : 1V @ 100mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 4ns
Current - Reverse Leakage @ Vr : 100nA @ 50V
Capacitance @ Vr, F : 2pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-204AH, DO-35, Axial
Supplier Device Package : DO-35
Operating Temperature - Junction : 175°C (Max)

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