Microsemi Corporation - JAN1N6641US

KEY Part #: K6426980

JAN1N6641US Pricing (USD) [7875pcs Stock]

1 pcs$5.25926
100 pcs$5.23309

Part Number:: JAN1N6641US

Manufacturer:: Microsemi Corporation

Detailed description:: DIODE GEN PURP 50V 300MA B-MELF. Diodes - General Purpose, Power, Switching Switching Diode

Manufacturer's standard lead time:: In stock

Shelf life:: One Year

Chip From:: Hong Kong

RoHS:

Payment method:

Shipment way:

Family Categories:: KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays and Thyristors - SCRs - Modules ...

Competitive Advantage:: We specialize in Microsemi Corporation JAN1N6641US electronic components. JAN1N6641US can be shipped within 24 hours after order. If you have any demands for JAN1N6641US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

JAN1N6641US Product Attributes

Part Number : JAN1N6641US

Manufacturer : Microsemi Corporation

Description : DIODE GEN PURP 50V 300MA B-MELF

Series : Military, MIL-PRF-19500/609

Part Status : Active

Diode Type : Standard

Voltage - DC Reverse (Vr) (Max) : 50V

Current - Average Rectified (Io) : 300mA

Voltage - Forward (Vf) (Max) @ If : 1.1V @ 300mA

Speed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 5ns

Current - Reverse Leakage @ Vr : 100nA @ 50V

Capacitance @ Vr, F : -

Mounting Type : Surface Mount

Package / Case : SQ-MELF, B

Supplier Device Package : D-5B

Operating Temperature - Junction : -65°C ~ 175°C

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