IXYS - IXFH170N10P

KEY Part #: K6394591

IXFH170N10P Pricing (USD) [11910pcs Stock]

  • 1 pcs$3.82521
  • 30 pcs$3.80618

Part Number:
IXFH170N10P
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 100V 170A TO-247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Diodes - Zener - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Single ...
Competitive Advantage:
We specialize in IXYS IXFH170N10P electronic components. IXFH170N10P can be shipped within 24 hours after order. If you have any demands for IXFH170N10P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH170N10P Product Attributes

Part Number : IXFH170N10P
Manufacturer : IXYS
Description : MOSFET N-CH 100V 170A TO-247
Series : HiPerFET™, PolarP2™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 9 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id : 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 198nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6000pF @ 25V
FET Feature : -
Power Dissipation (Max) : 715W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AD (IXFH)
Package / Case : TO-247-3