RQ3E080BNTB Pricing (USD) [880615pcs Stock]
- 1 pcs$0.04643
- 3,000 pcs$0.04620
- Part Number:
- RQ3E080BNTB
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET N-CH 30V 8A HSMT8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modules, Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RQ3E080BNTB electronic components. RQ3E080BNTB can be shipped within 24 hours after order. If you have any demands for RQ3E080BNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ3E080BNTB Product Attributes
Part Number :
RQ3E080BNTB
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 30V 8A HSMT8
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
15.2 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
14.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
660pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2W (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-HSMT (3.2x3)
Package / Case :
8-PowerVDFN
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