DMG6602SVTX-7 Pricing (USD) [773543pcs Stock]
- 1 pcs$0.04782
- Part Number:
- DMG6602SVTX-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET BVDSS 25V-30V TSOT26 TR.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Modules and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMG6602SVTX-7 electronic components. DMG6602SVTX-7 can be shipped within 24 hours after order. If you have any demands for DMG6602SVTX-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG6602SVTX-7 Product Attributes
Part Number :
DMG6602SVTX-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET BVDSS 25V-30V TSOT26 TR
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N and P-Channel Complementary
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
3.4A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs :
60 mOhm @ 3.1A, 10V, 95 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id :
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V, 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 15V, 420pF @ 15V
Power - Max :
840mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package :
TSOT-26
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