Toshiba Semiconductor and Storage - TK30S06K3L(T6L1,NQ

KEY Part #: K6420308

TK30S06K3L(T6L1,NQ Pricing (USD) [180543pcs Stock]

  • 1 pcs$0.22648
  • 2,000 pcs$0.22536

Part Number:
TK30S06K3L(T6L1,NQ
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 60V 30A DPAK-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modules, Diodes - Zener - Single and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK30S06K3L(T6L1,NQ electronic components. TK30S06K3L(T6L1,NQ can be shipped within 24 hours after order. If you have any demands for TK30S06K3L(T6L1,NQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK30S06K3L(T6L1,NQ Product Attributes

Part Number : TK30S06K3L(T6L1,NQ
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 60V 30A DPAK-3
Series : U-MOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 18 Ohm @ 15A, 10V
Vgs(th) (Max) @ Id : 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 10V
FET Feature : -
Power Dissipation (Max) : 58W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK+
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63