TK8A10K3,S5Q Pricing (USD) [60335pcs Stock]
- 1 pcs$0.71077
- Part Number:
- TK8A10K3,S5Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 100V 8A TO-220SIS.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK8A10K3,S5Q electronic components. TK8A10K3,S5Q can be shipped within 24 hours after order. If you have any demands for TK8A10K3,S5Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK8A10K3,S5Q Product Attributes
Part Number :
TK8A10K3,S5Q
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 100V 8A TO-220SIS
Series :
U-MOSIV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
120 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
12.9nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
530pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
18W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220SIS
Package / Case :
TO-220-3 Full Pack
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