[399pcs Stock]
- Part Number:
- F1235R12KT4GBOSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- IGBT F1235R12KT4GBOSA1.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Power Driver Modules and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies F1235R12KT4GBOSA1 electronic components. F1235R12KT4GBOSA1 can be shipped within 24 hours after order. If you have any demands for F1235R12KT4GBOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
F1235R12KT4GBOSA1 Product Attributes
Part Number :
F1235R12KT4GBOSA1
Manufacturer :
Infineon Technologies
Description :
IGBT F1235R12KT4GBOSA1
Series :
-
Part Status :
Obsolete
IGBT Type :
Trench Field Stop
Configuration :
Single
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
35A
Power - Max :
210W
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 35A
Current - Collector Cutoff (Max) :
1mA
Input Capacitance (Cies) @ Vce :
2nF @ 25V
Input :
Standard
NTC Thermistor :
No
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Package / Case :
Module
Supplier Device Package :
Module
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