GeneSiC Semiconductor - MURT20010R

KEY Part #: K6468664

MURT20010R Pricing (USD) [999pcs Stock]

  • 1 pcs$46.46811
  • 25 pcs$29.08672

Part Number:
MURT20010R
Manufacturer:
GeneSiC Semiconductor
Detailed description:
DIODE MODULE 100V 200A 3TOWER. Rectifiers SI S-FST RECOV 3TWR 50-600V 200A100P/71R
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in GeneSiC Semiconductor MURT20010R electronic components. MURT20010R can be shipped within 24 hours after order. If you have any demands for MURT20010R, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MURT20010R Product Attributes

Part Number : MURT20010R
Manufacturer : GeneSiC Semiconductor
Description : DIODE MODULE 100V 200A 3TOWER
Series : -
Part Status : Active
Diode Configuration : 1 Pair Common Anode
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) (per Diode) : 200A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 100A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 75ns
Current - Reverse Leakage @ Vr : 25µA @ 50V
Operating Temperature - Junction : -
Mounting Type : Chassis Mount
Package / Case : Three Tower
Supplier Device Package : Three Tower
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