RN1910FE,LF(CT Pricing (USD) [1936260pcs Stock]
- 1 pcs$0.01920
- 4,000 pcs$0.01910
- 8,000 pcs$0.01661
- 12,000 pcs$0.01412
- 28,000 pcs$0.01329
- 100,000 pcs$0.01107
- Part Number:
- RN1910FE,LF(CT
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- TRANS 2NPN PREBIAS 0.1W ES6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Thyristors - TRIACs and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage RN1910FE,LF(CT electronic components. RN1910FE,LF(CT can be shipped within 24 hours after order. If you have any demands for RN1910FE,LF(CT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1910FE,LF(CT Product Attributes
Part Number :
RN1910FE,LF(CT
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS 2NPN PREBIAS 0.1W ES6
Series :
-
Part Status :
Active
Transistor Type :
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) :
100mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
Frequency - Transition :
250MHz
Power - Max :
100mW
Mounting Type :
Surface Mount
Package / Case :
SOT-563, SOT-666
Supplier Device Package :
ES6
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