MT3S111P(TE12L,F) Pricing (USD) [244499pcs Stock]
- 1 pcs$0.15128
- Part Number:
- MT3S111P(TE12L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- RF TRANS NPN 6V 8GHZ PW-MINI.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules, Transistors - Programmable Unijunction, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage MT3S111P(TE12L,F) electronic components. MT3S111P(TE12L,F) can be shipped within 24 hours after order. If you have any demands for MT3S111P(TE12L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MT3S111P(TE12L,F) Product Attributes
Part Number :
MT3S111P(TE12L,F)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
RF TRANS NPN 6V 8GHZ PW-MINI
Series :
-
Part Status :
Active
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
6V
Frequency - Transition :
8GHz
Noise Figure (dB Typ @ f) :
1.25dB @ 1GHz
Gain :
10.5dB
Power - Max :
1W
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 30mA, 5V
Current - Collector (Ic) (Max) :
100mA
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
TO-243AA
Supplier Device Package :
PW-MINI
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