Taiwan Semiconductor Corporation - SFF1008GAHC0G

KEY Part #: K6426088

SFF1008GAHC0G Pricing (USD) [238574pcs Stock]

  • 1 pcs$0.15504

Part Number:
SFF1008GAHC0G
Manufacturer:
Taiwan Semiconductor Corporation
Detailed description:
DIODE GEN PURP 600V 10A ITO220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Bridge Rectifiers, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Arrays and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Taiwan Semiconductor Corporation SFF1008GAHC0G electronic components. SFF1008GAHC0G can be shipped within 24 hours after order. If you have any demands for SFF1008GAHC0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SFF1008GAHC0G Product Attributes

Part Number : SFF1008GAHC0G
Manufacturer : Taiwan Semiconductor Corporation
Description : DIODE GEN PURP 600V 10A ITO220AB
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 10A
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 5A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Current - Reverse Leakage @ Vr : 10µA @ 600V
Capacitance @ Vr, F : 50pF @ 4V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-3 Full Pack, Isolated Tab
Supplier Device Package : ITO-220AB
Operating Temperature - Junction : -55°C ~ 150°C

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