SIDC23D120H8X1SA1 Pricing (USD) [24354pcs Stock]
- 1 pcs$1.69229
- Part Number:
- SIDC23D120H8X1SA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- DIODE GEN PURP 1.2KV 35A WAFER.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - RF and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies SIDC23D120H8X1SA1 electronic components. SIDC23D120H8X1SA1 can be shipped within 24 hours after order. If you have any demands for SIDC23D120H8X1SA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIDC23D120H8X1SA1 Product Attributes
Part Number :
SIDC23D120H8X1SA1
Manufacturer :
Infineon Technologies
Description :
DIODE GEN PURP 1.2KV 35A WAFER
Series :
-
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
1200V
Current - Average Rectified (Io) :
35A (DC)
Voltage - Forward (Vf) (Max) @ If :
1.97V @ 35A
Speed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Current - Reverse Leakage @ Vr :
27µA @ 1200V
Capacitance @ Vr, F :
-
Mounting Type :
Surface Mount
Package / Case :
Die
Supplier Device Package :
Sawn on foil
Operating Temperature - Junction :
-40°C ~ 175°C
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