Part Number :
FF11MR12W1M1B11BOMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET 2 N-CH 1200V 100A MODULE
FET Type :
2 N-Channel (Dual)
FET Feature :
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C :
100A
Rds On (Max) @ Id, Vgs :
11 mOhm @ 100A, 15V
Vgs(th) (Max) @ Id :
5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds :
7950pF @ 800V
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
Module