Infineon Technologies - FD600R06ME3_B11_S2

KEY Part #: K6532732

FD600R06ME3_B11_S2 Pricing (USD) [640pcs Stock]

  • 1 pcs$72.54098

Part Number:
FD600R06ME3_B11_S2
Manufacturer:
Infineon Technologies
Detailed description:
IGBT MODULE VCES 600V 600A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Infineon Technologies FD600R06ME3_B11_S2 electronic components. FD600R06ME3_B11_S2 can be shipped within 24 hours after order. If you have any demands for FD600R06ME3_B11_S2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FD600R06ME3_B11_S2 Product Attributes

Part Number : FD600R06ME3_B11_S2
Manufacturer : Infineon Technologies
Description : IGBT MODULE VCES 600V 600A
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Configuration : Single Chopper
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 600A
Power - Max : 2250W
Vce(on) (Max) @ Vge, Ic : 1.6V @ 15V, 600A
Current - Collector Cutoff (Max) : 5mA
Input Capacitance (Cies) @ Vce : 60nF @ 25V
Input : Standard
NTC Thermistor : Yes
Operating Temperature : -40°C ~ 125°C
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module

You May Also Be Interested In
  • VS-GB90SA120U

    Vishay Semiconductor Diodes Division

    TRANSISTOR INSLTED GATE BIPOLAR.

  • VS-GB90DA60U

    Vishay Semiconductor Diodes Division

    TRANSISTOR INSLTED GATE BIPOLAR.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • CPV362M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 31 IMS-2.

  • CPV362M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 3.9A IMS-2.

  • CPV363M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6.8A IMS-2.