BAS21E6327HTSA1 Pricing (USD) [2403531pcs Stock]
- 1 pcs$0.01539
- 3,000 pcs$0.01408
- 6,000 pcs$0.01270
- 15,000 pcs$0.01105
- 30,000 pcs$0.00994
- 75,000 pcs$0.00884
- 150,000 pcs$0.00736
- Part Number:
- BAS21E6327HTSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching AF DIODE 250V 0.25A
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge Rectifiers, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Infineon Technologies BAS21E6327HTSA1 electronic components. BAS21E6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BAS21E6327HTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAS21E6327HTSA1 Product Attributes
Part Number :
BAS21E6327HTSA1
Manufacturer :
Infineon Technologies
Description :
DIODE GEN PURP 200V 250MA SOT23
Series :
-
Part Status :
Last Time Buy
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
200V
Current - Average Rectified (Io) :
250mA (DC)
Voltage - Forward (Vf) (Max) @ If :
1.25V @ 200mA
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Current - Reverse Leakage @ Vr :
100nA @ 200V
Capacitance @ Vr, F :
5pF @ 0V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Supplier Device Package :
SOT-23-3
Operating Temperature - Junction :
150°C (Max)
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