HGTG10N120BND Pricing (USD) [23675pcs Stock]
- 1 pcs$1.63059
- 10 pcs$1.46268
- 100 pcs$1.19857
- 500 pcs$0.96799
- 1,000 pcs$0.81638
- Part Number:
- HGTG10N120BND
- Manufacturer:
- ON Semiconductor
- Detailed description:
- IGBT 1200V 35A 298W TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Thyristors - SCRs, Power Driver Modules, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in ON Semiconductor HGTG10N120BND electronic components. HGTG10N120BND can be shipped within 24 hours after order. If you have any demands for HGTG10N120BND, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGTG10N120BND Product Attributes
Part Number :
HGTG10N120BND
Manufacturer :
ON Semiconductor
Description :
IGBT 1200V 35A 298W TO247
Series :
-
Part Status :
Not For New Designs
IGBT Type :
NPT
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
35A
Current - Collector Pulsed (Icm) :
80A
Vce(on) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Power - Max :
298W
Switching Energy :
850µJ (on), 800µJ (off)
Input Type :
Standard
Gate Charge :
100nC
Td (on/off) @ 25°C :
23ns/165ns
Test Condition :
960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) :
70ns
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Package / Case :
TO-247-3
Supplier Device Package :
TO-247
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