FDD6N50FTM Pricing (USD) [155353pcs Stock]
- 1 pcs$0.23809
- 2,500 pcs$0.23114
- Part Number:
- FDD6N50FTM
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 500V 5.5A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules, Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers, Transistors - Special Purpose and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDD6N50FTM electronic components. FDD6N50FTM can be shipped within 24 hours after order. If you have any demands for FDD6N50FTM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD6N50FTM Product Attributes
Part Number :
FDD6N50FTM
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 500V 5.5A DPAK
Series :
UniFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.15 Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
19.8nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
960pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
89W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D-Pak
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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