Vishay Semiconductor Diodes Division - VS-GB50YF120N

KEY Part #: K6534308

VS-GB50YF120N Pricing (USD) [587pcs Stock]

  • 1 pcs$78.96530
  • 12 pcs$65.09259

Part Number:
VS-GB50YF120N
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
IGBT 1200V 66A 330W ECONO.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Transistors - Programmable Unijunction, Transistors - Special Purpose and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-GB50YF120N electronic components. VS-GB50YF120N can be shipped within 24 hours after order. If you have any demands for VS-GB50YF120N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB50YF120N Product Attributes

Part Number : VS-GB50YF120N
Manufacturer : Vishay Semiconductor Diodes Division
Description : IGBT 1200V 66A 330W ECONO
Series : -
Part Status : Active
IGBT Type : -
Configuration : -
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 66A
Power - Max : 330W
Vce(on) (Max) @ Vge, Ic : 4.5V @ 15V, 75A
Current - Collector Cutoff (Max) : 250µA
Input Capacitance (Cies) @ Vce : -
Input : Standard
NTC Thermistor : No
Operating Temperature : 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : ECONO2 4PACK

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