APTGT75DH120T3G Pricing (USD) [1817pcs Stock]
- 1 pcs$23.81987
- 100 pcs$23.18835
- Part Number:
- APTGT75DH120T3G
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- MOD IGBT 1200V 110A SP3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Microsemi Corporation APTGT75DH120T3G electronic components. APTGT75DH120T3G can be shipped within 24 hours after order. If you have any demands for APTGT75DH120T3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTGT75DH120T3G Product Attributes
Part Number :
APTGT75DH120T3G
Manufacturer :
Microsemi Corporation
Description :
MOD IGBT 1200V 110A SP3
Series :
-
Part Status :
Active
IGBT Type :
Trench Field Stop
Configuration :
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
110A
Power - Max :
357W
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 75A
Current - Collector Cutoff (Max) :
250µA
Input Capacitance (Cies) @ Vce :
5.34nF @ 25V
Input :
Standard
NTC Thermistor :
Yes
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Package / Case :
SP3
Supplier Device Package :
SP3
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