Vishay Semiconductor Diodes Division - MI3035S-E3/4W

KEY Part #: K6427870

MI3035S-E3/4W Pricing (USD) [106866pcs Stock]

1 pcs$0.34611
1,000 pcs$0.31366

Part Number:: MI3035S-E3/4W

Manufacturer:: Vishay Semiconductor Diodes Division

Detailed description:: DIODE SCHOTTKY 35V 30A TO220AB.

Manufacturer's standard lead time:: In stock

Shelf life:: One Year

Chip From:: Hong Kong

RoHS:

Payment method:

Shipment way:

Family Categories:: KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF, Power Driver Modules and Transistors - FETs, MOSFETs - Single ...

Competitive Advantage:: We specialize in Vishay Semiconductor Diodes Division MI3035S-E3/4W electronic components. MI3035S-E3/4W can be shipped within 24 hours after order. If you have any demands for MI3035S-E3/4W, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

MI3035S-E3/4W Product Attributes

Part Number : MI3035S-E3/4W

Manufacturer : Vishay Semiconductor Diodes Division

Description : DIODE SCHOTTKY 35V 30A TO220AB

Series : -

Part Status : Active

Diode Type : Schottky

Voltage - DC Reverse (Vr) (Max) : 35V

Current - Average Rectified (Io) : 30A

Voltage - Forward (Vf) (Max) @ If : 700mV @ 30A

Speed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : -

Current - Reverse Leakage @ Vr : 200µA @ 35V

Capacitance @ Vr, F : -

Mounting Type : Through Hole

Package / Case : TO-220-3

Supplier Device Package : TO-220AB

Operating Temperature - Junction : -65°C ~ 150°C

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