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  5. GSID600A120S4B1

Global Power Technologies Group - GSID600A120S4B1

KEY Part #: K6532567

GSID600A120S4B1 Pricing (USD) [558pcs Stock]

  • 1 pcs$83.56374
  • 4 pcs$83.14800
Part Number:
GSID600A120S4B1
Manufacturer:
Global Power Technologies Group
Detailed description:
SILICON IGBT MODULES.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Global Power Technologies Group GSID600A120S4B1 electronic components. GSID600A120S4B1 can be shipped within 24 hours after order. If you have any demands for GSID600A120S4B1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GSID600A120S4B1 Product Attributes

Part Number : GSID600A120S4B1
Manufacturer : Global Power Technologies Group
Description : SILICON IGBT MODULES
Series : Amp+™
Part Status : Active
IGBT Type : -
Configuration : Half Bridge
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 1130A
Power - Max : 3060W
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 600A
Current - Collector Cutoff (Max) : 1mA
Input Capacitance (Cies) @ Vce : 51nF @ 25V
Input : Standard
NTC Thermistor : Yes
Operating Temperature : -40°C ~ 150°C
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module

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