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GeneSiC Semiconductor - 1N8026-GA

KEY Part #: K6424976

1N8026-GA Pricing (USD) [448pcs Stock]

  • 1 pcs$97.57053
  • 10 pcs$92.86155
  • 25 pcs$89.49719
Part Number:
1N8026-GA
Manufacturer:
GeneSiC Semiconductor
Detailed description:
DIODE SILICON 1.2KV 8A TO257.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - RF, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in GeneSiC Semiconductor 1N8026-GA electronic components. 1N8026-GA can be shipped within 24 hours after order. If you have any demands for 1N8026-GA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N8026-GA Product Attributes

Part Number : 1N8026-GA
Manufacturer : GeneSiC Semiconductor
Description : DIODE SILICON 1.2KV 8A TO257
Series : -
Part Status : Obsolete
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 8A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.6V @ 2.5A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 10µA @ 1200V
Capacitance @ Vr, F : 237pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
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