Renesas Electronics America - UPA2815T1S-E2-AT

KEY Part #: K6393784

UPA2815T1S-E2-AT Pricing (USD) [216534pcs Stock]

  • 1 pcs$0.17940
  • 5,000 pcs$0.17850

Part Number:
UPA2815T1S-E2-AT
Manufacturer:
Renesas Electronics America
Detailed description:
MOSFET P-CH 30V 21A 8HWSON.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - IGBTs - Arrays, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Renesas Electronics America UPA2815T1S-E2-AT electronic components. UPA2815T1S-E2-AT can be shipped within 24 hours after order. If you have any demands for UPA2815T1S-E2-AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UPA2815T1S-E2-AT Product Attributes

Part Number : UPA2815T1S-E2-AT
Manufacturer : Renesas Electronics America
Description : MOSFET P-CH 30V 21A 8HWSON
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 11 mOhm @ 21A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 47nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1760pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-HWSON (3.3x3.3)
Package / Case : 8-PowerWDFN