Vishay Semiconductor Diodes Division - US1KHE3_A/H

KEY Part #: K6445400

US1KHE3_A/H Pricing (USD) [717628pcs Stock]

  • 1 pcs$0.05154
  • 3,600 pcs$0.04961

Part Number:
US1KHE3_A/H
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 800V 1A DO214AC. Rectifiers 800 Volt 1.0A 75ns 30 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division US1KHE3_A/H electronic components. US1KHE3_A/H can be shipped within 24 hours after order. If you have any demands for US1KHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

US1KHE3_A/H Product Attributes

Part Number : US1KHE3_A/H
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 800V 1A DO214AC
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 800V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 75ns
Current - Reverse Leakage @ Vr : 10µA @ 800V
Capacitance @ Vr, F : 10pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AC, SMA
Supplier Device Package : DO-214AC (SMA)
Operating Temperature - Junction : -55°C ~ 150°C

You May Also Be Interested In
  • C2D05120E

    Cree/Wolfspeed

    DIODE SCHOTTKY 1.2KV 17.5A TO252.

  • VS-20ETF04FPPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 20A TO220FP.

  • IDB23E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 41A TO263-3.

  • VS-80EPS08PBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 80A TO247AC.

  • VS-80EPF12PBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1.2KV 80A TO247AC.

  • VS-80EPF06PBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 80A TO247AC.