VS-1EFH02HM3/I Pricing (USD) [792956pcs Stock]
- 1 pcs$0.04665
- 10,000 pcs$0.04227
- 30,000 pcs$0.03887
- Part Number:
- VS-1EFH02HM3/I
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- DIODE GEN PURP 200V 1A DO219AB. Rectifiers Hypfst Rct 1A 200V
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division VS-1EFH02HM3/I electronic components. VS-1EFH02HM3/I can be shipped within 24 hours after order. If you have any demands for VS-1EFH02HM3/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-1EFH02HM3/I Product Attributes
Part Number :
VS-1EFH02HM3/I
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 200V 1A DO219AB
Series :
Automotive, AEC-Q101, FRED Pt®
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
200V
Current - Average Rectified (Io) :
1A
Voltage - Forward (Vf) (Max) @ If :
930mV @ 1A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
25ns
Current - Reverse Leakage @ Vr :
2µA @ 200V
Capacitance @ Vr, F :
-
Mounting Type :
Surface Mount
Package / Case :
DO-219AB
Supplier Device Package :
DO-219AB (SMF)
Operating Temperature - Junction :
-55°C ~ 175°C
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