TPH3206LDGB Pricing (USD) [8659pcs Stock]
- 1 pcs$5.33247
- 10 pcs$4.79922
- 100 pcs$3.94603
- 500 pcs$3.30613
- Part Number:
- TPH3206LDGB
- Manufacturer:
- Transphorm
- Detailed description:
- GANFET N-CH 650V 16A PQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Arrays, Transistors - IGBTs - Modules, Power Driver Modules and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Transphorm TPH3206LDGB electronic components. TPH3206LDGB can be shipped within 24 hours after order. If you have any demands for TPH3206LDGB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH3206LDGB Product Attributes
Part Number :
TPH3206LDGB
Manufacturer :
Transphorm
Description :
GANFET N-CH 650V 16A PQFN
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
180 mOhm @ 11A, 8V
Vgs(th) (Max) @ Id :
2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
9.3nC @ 4.5V
Vgs (Max) :
±18V
Input Capacitance (Ciss) (Max) @ Vds :
760pF @ 480V
FET Feature :
-
Power Dissipation (Max) :
81W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PQFN (8x8)
Package / Case :
3-PowerDFN
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