Toshiba Semiconductor and Storage - TRS12E65C,S1Q

KEY Part #: K6437279

TRS12E65C,S1Q Pricing (USD) [7633pcs Stock]

  • 1 pcs$5.66740
  • 10 pcs$5.10154

Part Number:
TRS12E65C,S1Q
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
DIODE SCHOTTKY 650V 12A TO220-2L.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TRS12E65C,S1Q electronic components. TRS12E65C,S1Q can be shipped within 24 hours after order. If you have any demands for TRS12E65C,S1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TRS12E65C,S1Q Product Attributes

Part Number : TRS12E65C,S1Q
Manufacturer : Toshiba Semiconductor and Storage
Description : DIODE SCHOTTKY 650V 12A TO220-2L
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 12A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 12A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 90µA @ 170V
Capacitance @ Vr, F : 65pF @ 650V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220-2L
Operating Temperature - Junction : 175°C (Max)

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