Microsemi Corporation - APTM120H140FT1G

KEY Part #: K6522571

APTM120H140FT1G Pricing (USD) [2247pcs Stock]

  • 1 pcs$19.26652
  • 100 pcs$19.03968

Part Number:
APTM120H140FT1G
Manufacturer:
Microsemi Corporation
Detailed description:
MOSFET 4N-CH 1200V 8A SP1.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Diodes - RF, Diodes - Rectifiers - Single, Diodes - Rectifiers - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - DIACs, SIDACs, Diodes - Zener - Single and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Microsemi Corporation APTM120H140FT1G electronic components. APTM120H140FT1G can be shipped within 24 hours after order. If you have any demands for APTM120H140FT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM120H140FT1G Product Attributes

Part Number : APTM120H140FT1G
Manufacturer : Microsemi Corporation
Description : MOSFET 4N-CH 1200V 8A SP1
Series : -
Part Status : Active
FET Type : 4 N-Channel (H-Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C : 8A
Rds On (Max) @ Id, Vgs : 1.68 Ohm @ 7A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 145nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 3812pF @ 25V
Power - Max : 208W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP1
Supplier Device Package : SP1