Vishay Siliconix - SQJ912AEP-T1_GE3

KEY Part #: K6523102

SQJ912AEP-T1_GE3 Pricing (USD) [152759pcs Stock]

  • 1 pcs$0.24213
  • 3,000 pcs$0.20465

Part Number:
SQJ912AEP-T1_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2N-CH 40V 30A PPAK SO-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF, Diodes - RF, Power Driver Modules, Transistors - Bipolar (BJT) - Single and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Vishay Siliconix SQJ912AEP-T1_GE3 electronic components. SQJ912AEP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ912AEP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJ912AEP-T1_GE3 Product Attributes

Part Number : SQJ912AEP-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET 2N-CH 40V 30A PPAK SO-8
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 30A
Rds On (Max) @ Id, Vgs : 9.3 mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1835pF @ 20V
Power - Max : 48W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SO-8 Dual
Supplier Device Package : PowerPAK® SO-8 Dual

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