Vishay Siliconix - SI5511DC-T1-GE3

KEY Part #: K6523473

[4153pcs Stock]


    Part Number:
    SI5511DC-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET N/P-CH 30V 4A 1206-8.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single, Diodes - RF, Transistors - IGBTs - Single, Diodes - Rectifiers - Single and Transistors - FETs, MOSFETs - Arrays ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SI5511DC-T1-GE3 electronic components. SI5511DC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5511DC-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI5511DC-T1-GE3 Product Attributes

    Part Number : SI5511DC-T1-GE3
    Manufacturer : Vishay Siliconix
    Description : MOSFET N/P-CH 30V 4A 1206-8
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : N and P-Channel
    FET Feature : Logic Level Gate
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 4A, 3.6A
    Rds On (Max) @ Id, Vgs : 55 mOhm @ 4.8A, 4.5V
    Vgs(th) (Max) @ Id : 2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 7.1nC @ 5V
    Input Capacitance (Ciss) (Max) @ Vds : 435pF @ 15V
    Power - Max : 3.1W, 2.6W
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 8-SMD, Flat Lead
    Supplier Device Package : 1206-8 ChipFET™