TSM60N900CI C0G Pricing (USD) [59567pcs Stock]
- 1 pcs$0.65642
- Part Number:
- TSM60N900CI C0G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Detailed description:
- MOSFET N-CH 600V 4.5A ITO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Thyristors - SCRs - Modules, Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Taiwan Semiconductor Corporation TSM60N900CI C0G electronic components. TSM60N900CI C0G can be shipped within 24 hours after order. If you have any demands for TSM60N900CI C0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM60N900CI C0G Product Attributes
Part Number :
TSM60N900CI C0G
Manufacturer :
Taiwan Semiconductor Corporation
Description :
MOSFET N-CH 600V 4.5A ITO220
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
900 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
9.7nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
480pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
50W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
ITO-220AB
Package / Case :
TO-220-3 Full Pack, Isolated Tab
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