APT33GF120B2RDQ2G Pricing (USD) [4845pcs Stock]
- 1 pcs$8.94169
- 10 pcs$7.73120
- 25 pcs$7.15133
- 100 pcs$6.57150
- 250 pcs$5.99167
- Part Number:
- APT33GF120B2RDQ2G
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- IGBT 1200V 64A 357W TMAX.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Diodes - RF, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Microsemi Corporation APT33GF120B2RDQ2G electronic components. APT33GF120B2RDQ2G can be shipped within 24 hours after order. If you have any demands for APT33GF120B2RDQ2G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT33GF120B2RDQ2G Product Attributes
Part Number :
APT33GF120B2RDQ2G
Manufacturer :
Microsemi Corporation
Description :
IGBT 1200V 64A 357W TMAX
Series :
-
Part Status :
Active
IGBT Type :
NPT
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
64A
Current - Collector Pulsed (Icm) :
75A
Vce(on) (Max) @ Vge, Ic :
3V @ 15V, 25A
Power - Max :
357W
Switching Energy :
1.315mJ (on), 1.515mJ (off)
Input Type :
Standard
Gate Charge :
170nC
Td (on/off) @ 25°C :
14ns/185ns
Test Condition :
800V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) :
-
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Package / Case :
TO-247-3 Variant
Supplier Device Package :
-
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