SQ4961EY-T1_GE3 Pricing (USD) [118801pcs Stock]
- 1 pcs$0.31134
- 2,500 pcs$0.26312
- Part Number:
- SQ4961EY-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET DUAL P-CHAN 60V SO8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Power Driver Modules and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SQ4961EY-T1_GE3 electronic components. SQ4961EY-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ4961EY-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ4961EY-T1_GE3 Product Attributes
Part Number :
SQ4961EY-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET DUAL P-CHAN 60V SO8
Series :
Automotive, AEC-Q101, TrenchFET®
Part Status :
Active
FET Type :
2 P-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
4.4A (Tc)
Rds On (Max) @ Id, Vgs :
85 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1140pF @ 25V
Power - Max :
3.3W
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package :
8-SO
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