GeneSiC Semiconductor - MBR600200CTR

KEY Part #: K6468517

MBR600200CTR Pricing (USD) [729pcs Stock]

  • 1 pcs$63.61256
  • 25 pcs$37.09736

Part Number:
MBR600200CTR
Manufacturer:
GeneSiC Semiconductor
Detailed description:
DIODE SCHOTTKY 200V 300A 2 TOWER. Schottky Diodes & Rectifiers 150V 600A Reverse
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Thyristors - SCRs, Transistors - JFETs, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in GeneSiC Semiconductor MBR600200CTR electronic components. MBR600200CTR can be shipped within 24 hours after order. If you have any demands for MBR600200CTR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MBR600200CTR Product Attributes

Part Number : MBR600200CTR
Manufacturer : GeneSiC Semiconductor
Description : DIODE SCHOTTKY 200V 300A 2 TOWER
Series : -
Part Status : Active
Diode Configuration : 1 Pair Common Anode
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) (per Diode) : 300A
Voltage - Forward (Vf) (Max) @ If : 920mV @ 300A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 3mA @ 200V
Operating Temperature - Junction : -55°C ~ 150°C
Mounting Type : Chassis Mount
Package / Case : Twin Tower
Supplier Device Package : Twin Tower
You May Also Be Interested In
  • LQA10N150C

    Power Integrations

    DIODE CC 150V 5A DUAL TO252. Rectifiers 150V, Dual, 5A Ultra-Low Qrr Rect

  • MMBF4416A

    ON Semiconductor

    JFET N-CH 35V 15MA SOT23.

  • 2SK209-GR(TE85L,F)

    Toshiba Semiconductor and Storage

    JFET N-CH SOT23.

  • BF999E6327HTSA1

    Infineon Technologies

    MOSFET N-CH RF 20V 30MA SOT-23.

  • MMBD1405A

    ON Semiconductor

    DIODE ARRAY GP 175V 200MA SOT23. Diodes - General Purpose, Power, Switching High Voltage General Purpose

  • BAS4005E6433HTMA1

    Infineon Technologies

    DIODE ARRAY SCHOTTKY 40V SOT23.